Dual matched NPN bipolar junction transistor in SOIC package. Features a 40V collector-base and collector-emitter breakdown voltage, with a maximum collector-emitter voltage of 200mV and maximum collector current of 20mA. Operates across a temperature range of -40°C to 85°C with a maximum power dissipation of 500mW. Offers a transition frequency of 200MHz and supports both through-hole and surface mount configurations. Supplied on tape and reel, this RoHS compliant component contains lead.
PackageSOIC
MountingThrough Hole, Surface Mount
PolarityNPN
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Technical Specifications
Analog Devices SSM2212RZ-R7 technical specifications.
General
| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 200mV |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole, Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
Compliance
| RoHS | Compliant |
Datasheet
Analog Devices SSM2212RZ-R7 Datasheet
Download the complete datasheet for Analog Devices SSM2212RZ-R7 to view detailed technical specifications.
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