Dual matched NPN bipolar junction transistor in SOIC package. Features a 40V collector-base and collector-emitter breakdown voltage, with a maximum collector-emitter voltage of 200mV and maximum collector current of 20mA. Operates across a temperature range of -40°C to 85°C with a maximum power dissipation of 500mW. Offers a transition frequency of 200MHz and supports both through-hole and surface mount configurations. Supplied on tape and reel, this RoHS compliant component contains lead.
PackageSOIC
MountingThrough Hole, Surface Mount
PolarityNPN
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Technical Specifications
Analog Devices SSM2212RZ-R7 technical specifications.
General
Package/Case
SOIC
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector-emitter Voltage-Max
200mV
Lead Free
Contains Lead
Max Breakdown Voltage
40V
Max Collector Current
20mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Power Dissipation
500mW
Mount
Through Hole, Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
200MHz
Compliance
RoHS
Compliant
Datasheet
Analog Devices SSM2212RZ-R7 Datasheet
Download the complete datasheet for Analog Devices SSM2212RZ-R7 to view detailed technical specifications.
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