N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 60A continuous drain current. This single-element transistor is housed in a TO-220 package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a low drain-source on-resistance of 9mΩ at 10V, typical gate charge of 22nC at 4.5V, and input capacitance of 2400pF at 15V. Operating temperature range is -55°C to 125°C.
Anpec Electronics APM3009NFC-TU technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.67(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 9.65(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 60A |
| Maximum Drain Source Resistance | 9@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 2400@15VpF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| EU RoHS | No |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Anpec Electronics APM3009NFC-TU to view detailed technical specifications.
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