Bourns
BD649-S
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-220, 3 PIN
PackageTO-220
MountingThrough Hole
PolarityNPN
Power62.5W
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Technical Specifications
Bourns BD649-S technical specifications.
General
Package/Case
TO-220
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
2.5V
Emitter Base Voltage (VEBO)
5V
Height
9.3mm
hFE Min
750
Length
10.4mm
Max Collector Current
8A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Mount
Through Hole
Number of Elements
1
Package Quantity
15000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
62.5W
Radiation Hardening
No
RoHS Compliant
Yes
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Bourns BD649-S Datasheet
Download the complete datasheet for Bourns BD649-S to view detailed technical specifications.
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