The BDV65B-S is a bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 12A. It is packaged in a SOT-93 case and is designed for through-hole mounting. The transistor has a minimum current gain of 1000 and a maximum power dissipation of 3.5W. It operates over a temperature range of -65°C to 150°C.
PackageSOT-93
MountingThrough Hole
PolarityNPN
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Technical Specifications
Bourns BDV65B-S technical specifications.
General
| Package/Case | SOT-93 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 12.2mm |
| hFE Min | 1000 |
| Length | 15.2mm |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 3.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 300 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Bourns BDV65B-S Datasheet
Download the complete datasheet for Bourns BDV65B-S to view detailed technical specifications.
No datasheet is available for this part.