The BDW93B-S is a TO-220 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1mA. It has a maximum power dissipation of 2W and can operate over a temperature range of -65°C to 150°C. The transistor is RoHS compliant and available in tape and reel packaging with 1000 units per package.
PackageTO-220
MountingThrough Hole
PolarityNPN
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Technical Specifications
Bourns BDW93B-S technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 1mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Bourns BDW93B-S Datasheet
Download the complete datasheet for Bourns BDW93B-S to view detailed technical specifications.
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