Ultra High Frequency RF Bipolar Transistor, NPN polarity, featuring a 2-element silicon design. This surface mount transistor operates within the 10GHz frequency band with a gain of 14.5dB. Key specifications include a maximum collector current of 32mA, a collector-emitter voltage of 5.5V, and a power dissipation of 150mW. Packaged in a SC-70 (SOT-363) plastic case, this RoHS compliant component is supplied on tape and reel.
Frequency10GHz
PackageSOT-363
Current Rating32mA
MountingSurface Mount
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Technical Specifications
Broadcom AT-32063-TR1G technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
11V
Collector Emitter Breakdown Voltage
5.5V
Collector Emitter Voltage (VCEO)
5.5V
Collector-emitter Voltage-Max
5.5V
Continuous Collector Current
32mA
Current Rating
32mA
Emitter Base Voltage (VEBO)
1.5V
Frequency
10GHz
Gain
14.5dB
Gain Bandwidth Product
10GHz
Lead Free
Lead Free
Max Breakdown Voltage
5.5V
Max Collector Current
32mA
Max Frequency
10GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
RoHS Compliant
Yes
DC Rated Voltage
5.5V
Compliance
RoHS
Compliant
Datasheet
Broadcom AT-32063-TR1G Datasheet
Download the complete datasheet for Broadcom AT-32063-TR1G to view detailed technical specifications.
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