
NPN RF bipolar transistor designed for C-band applications. Features a 8GHz maximum frequency and 8GHz gain bandwidth product, with a minimum hFE of 30 and a typical gain of 18.5dB. Operates with a continuous collector current of 60mA and a maximum collector current of 60mA, supporting a collector-emitter voltage of 12V. This surface mount component offers a maximum power dissipation of 500mW and operates within a temperature range of -65°C to 150°C.
Broadcom AT-41435G technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 60mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 8GHz |
| Gain | 18.5dB |
| Gain Bandwidth Product | 8GHz |
| hFE Min | 30 |
| Max Collector Current | 60mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power (dBm) | 19dBm |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| RoHS | Compliant |
Download the complete datasheet for Broadcom AT-41435G to view detailed technical specifications.
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