Ultra high frequency NPN RF bipolar transistor designed for demanding applications. Features a 60mA continuous collector current and a 12V collector-emitter breakdown voltage. Operates across an 8GHz frequency range with a 17dB gain and 8GHz gain bandwidth product. Packaged as a silicon die, this lead-free and RoHS compliant component offers a wide operating temperature range from -60°C to 200°C.
Frequency8GHz
PackageDIE
MountingSurface Mount
PolarityNPN
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Technical Specifications
Broadcom AT-41500-GP4 technical specifications.
General
Package/Case
DIE
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
12V
Continuous Collector Current
60mA
Emitter Base Voltage (VEBO)
1.5V
Frequency
8GHz
Gain
17dB
Gain Bandwidth Product
8GHz
Lead Free
Lead Free
Max Collector Current
60mA
Max Frequency
8GHz
Max Operating Temperature
200°C
Min Operating Temperature
-60°C
Max Power Dissipation
500mW
Mount
Surface Mount
Package Quantity
100
Packaging
Tray
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
8GHz
Compliance
RoHS
Compliant
Datasheet
Broadcom AT-41500-GP4 Datasheet
Download the complete datasheet for Broadcom AT-41500-GP4 to view detailed technical specifications.
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