NPN RF small signal bipolar transistor designed for C-band applications. Features a 10GHz maximum frequency and a gain of 14.5dB. Maximum collector current is 50mA with a collector-emitter voltage of 12V. This silicon transistor is surface mountable in a SOT-23 package, operating from -65°C to 150°C, and is RoHS compliant.
Frequency10GHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Broadcom AT-41533-TR1G technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
12V
Continuous Collector Current
50mA
Emitter Base Voltage (VEBO)
1.5V
Frequency
10GHz
Gain
14.5dB
Gain Bandwidth Product
10GHz
hFE Min
30
Max Breakdown Voltage
12V
Max Collector Current
50mA
Max Frequency
10GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
225mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
225mW
Radiation Hardening
No
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Broadcom AT-41533-TR1G Datasheet
Download the complete datasheet for Broadcom AT-41533-TR1G to view detailed technical specifications.
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