NPN RF bipolar transistor designed for C-band applications, featuring a 8GHz maximum frequency and transition frequency. This surface-mount device offers a continuous collector current of 60mA and a maximum collector current of 80mA, with a collector-emitter breakdown voltage of 12V. Operating across a temperature range of -65°C to 150°C, it provides a gain of 13.5dB and a maximum power dissipation of 600mW. Constructed with silicon and housed in a ceramic microstrip package, this lead-free and RoHS-compliant component is suitable for demanding electronic circuits.
Frequency8GHz
PackageSMD/SMT
Current Rating80mA
MountingSurface Mount
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Technical Specifications
Broadcom AT-42035G technical specifications.
General
Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
12V
Collector-emitter Voltage-Max
12V
Continuous Collector Current
60mA
Current Rating
80mA
Emitter Base Voltage (VEBO)
1.5V
Frequency
8GHz
Gain
13.5dB
Gain Bandwidth Product
8GHz
Lead Free
Lead Free
Max Collector Current
80mA
Max Frequency
8GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
600mW
Mount
Surface Mount
Package Quantity
100
Packaging
Bulk
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
8GHz
DC Rated Voltage
12V
Compliance
RoHS
Compliant
Datasheet
Broadcom AT-42035G Datasheet
Download the complete datasheet for Broadcom AT-42035G to view detailed technical specifications.
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