
NPN RF bipolar transistor designed for C-band applications, featuring a 8GHz maximum frequency and transition frequency. This surface-mount device offers a continuous collector current of 60mA and a maximum collector current of 80mA, with a collector-emitter breakdown voltage of 12V. Operating across a temperature range of -65°C to 150°C, it provides a gain of 13.5dB and a maximum power dissipation of 600mW. Constructed with silicon and housed in a ceramic microstrip package, this lead-free and RoHS-compliant component is suitable for demanding electronic circuits.
Broadcom AT-42035G technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 60mA |
| Current Rating | 80mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 8GHz |
| Gain | 13.5dB |
| Gain Bandwidth Product | 8GHz |
| Lead Free | Lead Free |
| Max Collector Current | 80mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| DC Rated Voltage | 12V |
| RoHS | Compliant |
Download the complete datasheet for Broadcom AT-42035G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
