High-performance RF small signal field-effect transistor designed for L-band applications. Features N-channel, silicon, high electron mobility FET technology with a 2 GHz operating frequency and 15 dB gain. Offers a 1A continuous drain current and 7V drain-to-source voltage, with a low 1dB noise figure. Packaged in an 8-lead LPCC (MO-229) surface mount package with tin matte contact plating, operating from -65°C to 150°C.
Frequency2GHz
Voltage Rating7V
Current Rating1A
MountingSurface Mount
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Technical Specifications
Broadcom ATF-501P8-BLK technical specifications.
General
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
1A
Current Rating
1A
Drain to Source Voltage (Vdss)
7V
Frequency
2GHz
Gain
15dB
Gate to Source Voltage (Vgs)
800mV
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
3.5W
Mount
Surface Mount
Noise Figure
1dB
Nominal Supply Current
280mA
Operating Frequency
2 GHz
Package Quantity
100
Packaging
Bulk
Power Dissipation
3.5W
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Technology
GAAS
Test Voltage
4.5V
Voltage Rating
7V
DC Rated Voltage
4.5V
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-501P8-BLK Datasheet
Download the complete datasheet for Broadcom ATF-501P8-BLK to view detailed technical specifications.
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