ATF-501P8-BLK

High-performance RF small signal field-effect transistor designed for L-band applications. Features N-channel, silicon, high electron mobility FET technology with a 2 GHz operating frequency and 15 dB gain. Offers a 1A continuous drain current and 7V drain-to-source voltage, with a low 1dB noise figure. Packaged in an 8-lead LPCC (MO-229) surface mount package with tin matte contact plating, operating from -65°C to 150°C.