RF Power Field-Effect Transistor, N-Channel, Silicon, High Electron Mobility FET for C-Band applications. Features a continuous drain current of 1A, drain-to-source voltage of 7V, and a maximum operating frequency of 6GHz. Offers a typical gain of 14.8dB and a low noise figure of 1.4dB. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 3W. Surface mountable in an 8-lead LPCC package. RoHS compliant.
Frequency2GHz
Voltage Rating7V
Current Rating1A
MountingSurface Mount
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Technical Specifications
Broadcom ATF-511P8-BLK technical specifications.
General
Continuous Drain Current (ID)
1A
Current Rating
1A
Drain to Source Voltage (Vdss)
7V
Dual Supply Voltage
4.5V
Frequency
2GHz
Gain
14.8dB
Gate to Source Voltage (Vgs)
1V
Height
0.8mm
Lead Free
Lead Free
Length
2.1mm
Max Frequency
6GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
3W
Mount
Surface Mount
Noise Figure
1.4dB
Nominal Vgs
280mV
Package Quantity
100
Packaging
Bulk
Power Dissipation
3W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Test Voltage
4.5V
Voltage Rating
7V
DC Rated Voltage
4.5V
Width
2.1mm
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-511P8-BLK Datasheet
Download the complete datasheet for Broadcom ATF-511P8-BLK to view detailed technical specifications.
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