BROADCOM

ATF-511P8-BLK

Datasheet

RF FET, 6GHz, 7V, 1A, 1.4dB NF, 14.8dB Gain, SMT

Broadcom

ATF-511P8-BLK

Name: ATF-511P8-BLK Broadcom
Brand: Broadcom
SKU: ATF-511P8-BLK

RF FET, 6GHz, 7V, 1A, 1.4dB NF, 14.8dB Gain, SMT

RF Power Field-Effect Transistor, N-Channel, Silicon, High Electron Mobility FET for C-Band applications. Features a continuous drain current of 1A, drain-to-source voltage of 7V, and a maximum operating frequency of 6GHz. Offers a typical gain of 14.8dB and a low noise figure of 1.4dB. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 3W. Surface mountable in an 8-lead LPCC package. RoHS compliant.

Frequency2GHz

Voltage Rating7V

Current Rating1A

MountingSurface Mount

Quick Jump:

Technical Specifications

Broadcom ATF-511P8-BLK technical specifications.

General

Continuous Drain Current (ID)	1A
Current Rating	1A
Drain to Source Voltage (Vdss)	7V
Dual Supply Voltage	4.5V
Frequency	2GHz
Gain	14.8dB
Gate to Source Voltage (Vgs)	1V
Height	0.8mm
Lead Free	Lead Free
Length	2.1mm
Max Frequency	6GHz
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	3W
Mount	Surface Mount
Noise Figure	1.4dB
Nominal Vgs	280mV
Package Quantity	100
Packaging	Bulk
Power Dissipation	3W
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Test Voltage	4.5V
Voltage Rating	7V
DC Rated Voltage	4.5V
Width	2.1mm