High-performance RF small signal field-effect transistor, 1-element, C Band, N-Channel, High Electron Mobility FET. Features 2 GHz operating frequency, 16dB gain, and a 1.5dB noise figure. Designed for surface mount applications with a SOT-89 package and Tin, Matte contact plating. Supports a continuous drain current of 500mA and a drain-to-source voltage of 7V. Operating temperature range from -65°C to 150°C.
Frequency2GHz
PackageSOT-89
Voltage Rating7V
MountingSurface Mount
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Technical Specifications
Broadcom ATF-52189-BLK technical specifications.
General
Package/Case
SOT-89
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
500mA
Drain to Source Voltage (Vdss)
7V
Dual Supply Voltage
4.5V
Frequency
2GHz
Gain
16dB
Gate to Source Voltage (Vgs)
1V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Noise Figure
1.5dB
Nominal Supply Current
200mA
Nominal Vgs
280mV
Operating Frequency
2 GHz
Package Quantity
100
Packaging
Bag
Power Dissipation
1.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Technology
GAAS
Termination
SMD/SMT
Test Voltage
4.5V
Voltage Rating
7V
DC Rated Voltage
4.5V
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-52189-BLK Datasheet
Download the complete datasheet for Broadcom ATF-52189-BLK to view detailed technical specifications.
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