High-performance RF small signal field-effect transistor, 1-element, C Band, N-Channel, High Electron Mobility FET. Features 2 GHz operating frequency, 16dB gain, and a 1.5dB noise figure. Designed for surface mount applications with a SOT-89 package and Tin, Matte contact plating. Supports a continuous drain current of 500mA and a drain-to-source voltage of 7V. Operating temperature range from -65°C to 150°C.
Broadcom ATF-52189-BLK technical specifications.
| Package/Case | SOT-89 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 7V |
| Dual Supply Voltage | 4.5V |
| Frequency | 2GHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 1V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Noise Figure | 1.5dB |
| Nominal Supply Current | 200mA |
| Nominal Vgs | 280mV |
| Operating Frequency | 2 GHz |
| Package Quantity | 100 |
| Packaging | Bag |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Technology | GAAS |
| Termination | SMD/SMT |
| Test Voltage | 4.5V |
| Voltage Rating | 7V |
| DC Rated Voltage | 4.5V |
| RoHS | Compliant |
Download the complete datasheet for Broadcom ATF-52189-BLK to view detailed technical specifications.
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