High-performance RF small signal field-effect transistor, N-channel, 1-element, L-band operation up to 2 GHz. Features 7V drain-source voltage, 500mA continuous drain current, and 1.5dB noise figure. Offers 17dB gain with a nominal gate-source voltage of 280mV. Packaged in an 8-lead LPCC (2x2mm) surface-mount package with matte tin plating. Operates across a wide temperature range of -65°C to 150°C.
Frequency2GHz
Voltage Rating7V
MountingSurface Mount
Power1.5W
Quick Jump:
Technical Specifications
Broadcom ATF-521P8-BLK technical specifications.
General
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
500mA
Drain to Source Voltage (Vdss)
7V
Dual Supply Voltage
4.5V
Frequency
2GHz
Gain
17dB
Gate to Source Voltage (Vgs)
1V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Noise Figure
1.5dB
Nominal Vgs
280mV
Operating Frequency
2 GHz
Package Quantity
100
Packaging
Bulk
Power Dissipation
1.5W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Technology
GAAS
Termination
SMD/SMT
Test Voltage
4.5V
Voltage Rating
7V
DC Rated Voltage
4.5V
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-521P8-BLK Datasheet
Download the complete datasheet for Broadcom ATF-521P8-BLK to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
