ATF-53189-BLK

Surface mount RF small signal field-effect transistor, 1-element, N-channel, High Electron Mobility FET (HEMT) for C-band operation. Features a 0.8dB noise figure at 2 GHz, 17.2dB gain, and a maximum operating frequency of 6 GHz. With a continuous drain current of 300mA and drain-to-source voltage of 7V, this lead-free component is housed in a SOT-89 package with tin matte plating. Operating temperature range from -65°C to 150°C.