Surface mount RF small signal field-effect transistor, 1-element, N-channel, High Electron Mobility FET (HEMT) for C-band operation. Features a 0.8dB noise figure at 2 GHz, 17.2dB gain, and a maximum operating frequency of 6 GHz. With a continuous drain current of 300mA and drain-to-source voltage of 7V, this lead-free component is housed in a SOT-89 package with tin matte plating. Operating temperature range from -65°C to 150°C.
Frequency900MHz
PackageSOT-89
Current135mA
Voltage Rating7V
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Technical Specifications
Broadcom ATF-53189-BLK technical specifications.
General
Package/Case
SOT-89
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
300mA
Drain to Source Voltage (Vdss)
7V
Dual Supply Voltage
4V
Frequency
900MHz
Gain
17.2dB
Gate to Source Voltage (Vgs)
1V
Height
1.6mm
Lead Free
Lead Free
Length
4.6mm
Max Frequency
6GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Noise Figure
0.8dB
Nominal Vgs
300mV
Operating Frequency
2 GHz
Package Quantity
100
Packaging
Bulk
Reach SVHC Compliant
No
RoHS Compliant
Yes
Supply Current
135mA
Technology
GAAS
Termination
SMD/SMT
Test Voltage
4V
Voltage Rating
7V
DC Rated Voltage
4V
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-53189-BLK Datasheet
Download the complete datasheet for Broadcom ATF-53189-BLK to view detailed technical specifications.
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