BROADCOM

ATF-531P8-BLK

RF FET, 2GHz, 7V, 300mA, 20dB Gain, 0.6dB NF, GaAs, LCC-8

Broadcom

ATF-531P8-BLK

Name: ATF-531P8-BLK Broadcom
Brand: Broadcom
SKU: ATF-531P8-BLK

RF FET, 2GHz, 7V, 300mA, 20dB Gain, 0.6dB NF, GaAs, LCC-8

High-performance RF small signal field-effect transistor designed for C-band applications. This N-channel, 1-element High Electron Mobility FET features a 2 GHz operating frequency and 20dB gain. It offers a low noise figure of 0.6dB and a continuous drain current of 300mA with a drain-to-source voltage of 7V. The device is housed in a compact 2x2mm MO-229 package with matte tin contact plating, suitable for surface mounting. Operating with a 4V power supply, this RoHS compliant component is rated for temperatures from -65°C to 150°C.

Frequency2GHz

Current135mA

Voltage Rating7V

MountingSurface Mount

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Technical Specifications

Broadcom ATF-531P8-BLK technical specifications.

General

Contact Plating	Tin, Matte
Continuous Drain Current (ID)	300mA
Drain to Source Voltage (Vdss)	7V
Dual Supply Voltage	4V
Frequency	2GHz
Gain	20dB
Gate to Source Voltage (Vgs)	1V
Height	0.8mm
Length	2.1mm
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	1W
Mount	Surface Mount
Noise Figure	0.6dB
Nominal Vgs	300mV
Operating Frequency	2 GHz
Package Quantity	100
Packaging	Bulk
Power Supply	4V
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Supply Current	135mA
Technology	GAAS
Termination	SMD/SMT
Test Voltage	4V
Voltage Rating	7V
Width	2.1mm