Broadcom
ATF-531P8-TR2
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8
Frequency2GHz
Voltage Rating7V
MountingSurface Mount
Power1W
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Technical Specifications
Broadcom ATF-531P8-TR2 technical specifications.
General
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
300mA
Drain to Source Voltage (Vdss)
7V
Frequency
2GHz
Gain
20dB
Gate to Source Voltage (Vgs)
1V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Noise Figure
0.6dB
Operating Frequency
2 GHz
Package Quantity
10000
Packaging
Tape and Reel
Power Dissipation
1W
RoHS Compliant
Yes
Technology
GAAS
Test Voltage
4V
Voltage Rating
7V
DC Rated Voltage
4V
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-531P8-TR2 Datasheet
Download the complete datasheet for Broadcom ATF-531P8-TR2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.