Surface mount N-channel Gallium Arsenide High Electron Mobility FET for C-band operation up to 2 GHz. Features a 0.5dB noise figure, 16.6dB gain, and 5V drain-to-source voltage. This RoHS compliant transistor operates with a 3V power supply, offering 120mA continuous drain current and 725mW power dissipation. Packaged in a 4-pin SC-70 (SOT-343) plastic housing.
Frequency2GHz
PackageSOT-343
Current60mA
Voltage Rating5V
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Technical Specifications
Broadcom ATF-54143-BLKG technical specifications.
General
Package/Case
SOT-343
Continuous Drain Current (ID)
120mA
Drain to Source Voltage (Vdss)
5V
FET Technology
HIGH ELECTRON MOBILITY
Frequency
2GHz
Gain
16.6dB
Gate to Source Voltage (Vgs)
1V
Height
1mm
Highest Frequency Band
C BAND
Lead Free
Lead Free
Length
2.25mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
725mW
Mount
Surface Mount
Noise Figure
0.5dB
Operating Frequency
2 GHz
Package Quantity
100
Packaging
Strip
Polarity
N-CHANNEL
Power Dissipation
725mW
Power Supply
3V
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Supply Current
60mA
Technology
GAAS
Test Voltage
3V
Voltage Rating
5V
DC Rated Voltage
3V
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-54143-BLKG Datasheet
Download the complete datasheet for Broadcom ATF-54143-BLKG to view detailed technical specifications.
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