RF Small Signal Field-Effect Transistor, N-Channel, Silicon, High Electron Mobility FET, 1-Element, C Band. Features 2 GHz operating frequency, 17.7dB gain, and 0.6dB noise figure. Maximum drain to source voltage is 5V, with a continuous drain current of 100mA. Housed in a 4-pin SC-70 (SOT-343) surface mount package with tin, matte contact plating. Operates from -65°C to 150°C, with 270mW power dissipation.
Frequency2GHz
PackageSOT-343
Voltage Rating5V
MountingSurface Mount
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Technical Specifications
Broadcom ATF-55143-TR1G technical specifications.
General
Package/Case
SOT-343
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100mA
Drain to Source Voltage (Vdss)
5V
Dual Supply Voltage
2.7V
Frequency
2GHz
Gain
17.7dB
Gate to Source Voltage (Vgs)
1V
Height
1.2mm
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
270mW
Mount
Surface Mount
Noise Figure
0.6dB
Nominal Vgs
370mV
Operating Frequency
2 GHz
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
270mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Technology
GAAS
Termination
SMD/SMT
Test Voltage
2.7V
Threshold Voltage
370mV
Voltage Rating
5V
DC Rated Voltage
5V
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-55143-TR1G Datasheet
Download the complete datasheet for Broadcom ATF-55143-TR1G to view detailed technical specifications.
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