ATF-551M4-TR1

Datasheet

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4

Broadcom

ATF-551M4-TR1

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4

Frequency2GHz

Package0505

Voltage Rating5V

MountingSurface Mount

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Technical Specifications

Broadcom ATF-551M4-TR1 technical specifications.

General

Case Code (Imperial)

0505

Case Code (Metric)

1412

Package/Case

0505

Continuous Drain Current (ID)

100mA

Frequency

2GHz

Gain

17.5dB

Gate to Source Voltage (Vgs)

Lead Free

Contains Lead

Max Operating Temperature

150°C

Min Operating Temperature

-65°C

Mount

Surface Mount

Noise Figure

0.5dB

Packaging

Tape and Reel

Power Dissipation

270mW

Radiation Hardening

RoHS Compliant

Yes

Test Voltage

2.7V

Voltage Rating

DC Rated Voltage

Compliance

RoHS

Compliant

Datasheet

This datasheet cannot be embedded due to technical restrictions.

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Product Images

ATF-551M4-TR1

ATF-551M4-TR1

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4

Technical Specifications

General

Compliance

Datasheet

Broadcom ATF-551M4-TR1 Datasheet

Product Images