
Surface mount RF small signal field-effect transistor designed for C-band applications. Features N-channel, high electron mobility FET technology with a 2 GHz operating frequency. Delivers 16.5dB gain and a low 0.5dB noise figure. Rated for 5V drain-to-source voltage and 100mA continuous drain current. Housed in a 4-pin SC-70 (SOT-343) package with tin, matte contact plating. Lead-free and RoHS compliant, operating from -65°C to 150°C.
Broadcom ATF-58143-TR1G technical specifications.
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