California Eastern Laboratories
NE3512S02-T1C-A
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, PLASTIC, S02, MICRO-X-4
MountingSurface Mount
Power165mW
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Technical Specifications
California Eastern Laboratories NE3512S02-T1C-A technical specifications.
General
| Continuous Drain Current (ID) | 70mA |
| DS Breakdown Voltage-Min | 3V |
| Gain | 13.5dB |
| Gate to Source Voltage (Vgs) | 3V |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Output Power | 165mW |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
California Eastern Laboratories NE3512S02-T1C-A Datasheet
Download the complete datasheet for California Eastern Laboratories NE3512S02-T1C-A to view detailed technical specifications.
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