California Eastern Laboratories
NE8500295-6
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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Technical Specifications
California Eastern Laboratories NE8500295-6 technical specifications.
General
| Continuous Drain Current (ID) | 2.5A |
| Gate to Source Voltage (Vgs) | 12V |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
California Eastern Laboratories NE8500295-6 Datasheet
Download the complete datasheet for California Eastern Laboratories NE8500295-6 to view detailed technical specifications.
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