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Technical Specifications
CEL NE3210S01 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 70mA |
| Drain to Source Breakdown Voltage | 4V |
| Drain to Source Voltage (Vdss) | 4V |
| Frequency | 12GHz |
| Gain | 13.5dB |
| Gate to Source Voltage (Vgs) | -3V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 165mW |
| Noise Figure | 0.35dB |
| Operating Frequency | 12 GHz |
| Package Quantity | 1 |
| Packaging | Strip |
| Polarity | N-CHANNEL |
| Power Dissipation | 165mW |
| Radiation Hardening | No |
| Technology | GAAS |
| Test Voltage | 2V |
| Voltage Rating | 4V |
Compliance
| RoHS | Compliant |
Datasheet
CEL NE3210S01 Datasheet
Download the complete datasheet for CEL NE3210S01 to view detailed technical specifications.
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