NE5511279A-T1-A

RF MOSFET Transistors UHF Band RF Power

Frequency900MHz

PackageA

Voltage Rating20V

Current Rating3A

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CEL NE5511279A-T1-A technical specifications.

Package/Case	A
Continuous Drain Current (ID)	3A
Current Rating	3A
Drain to Source Breakdown Voltage	20V
Drain to Source Voltage (Vdss)	20V
Frequency	900MHz
Gain	15dB
Gate to Source Voltage (Vgs)	6V
Lead Free	Lead Free
Max Operating Temperature	125°C
Max Power Dissipation	20W
Output Power (dBm)	40dBm
Package Quantity	1000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	20W
Technology	LDMOS
Test Voltage	7.5V
Voltage Rating	20V
DC Rated Voltage	7.5V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.