The CEL NE68139R-T1-A is a bipolar junction transistor with a collector-emitter breakdown voltage of 10V and a maximum collector current of 65mA. It has a power dissipation of 200mW and is designed for surface mount applications. The transistor has a gain of 13.5dB and a transition frequency of 9GHz. It is available in a tape and reel packaging with 3000 units per package.
MountingSurface Mount
PolarityNPN
Power200mW
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Technical Specifications
CEL NE68139R-T1-A technical specifications.
General
| Collector Emitter Breakdown Voltage | 10V |
| Continuous Collector Current | 65mA |
| Gain | 13.5dB |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 65mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Transition Frequency | 9GHz |
Compliance
| RoHS | Compliant |
Datasheet
CEL NE68139R-T1-A Datasheet
Download the complete datasheet for CEL NE68139R-T1-A to view detailed technical specifications.
No datasheet is available for this part.