NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 12V collector-emitter breakdown voltage and a 6.5 GHz transition frequency. This surface mount device, housed in a SOT-89 package, offers a maximum continuous collector current of 100mA and a power dissipation of 2W. Key specifications include a minimum hFE of 120 and a gain of 9dB, with an operating temperature range from -25°C to 150°C.
Frequency6.5 GHz
PackageSOT-89
Current Rating100mA
MountingSurface Mount
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Technical Specifications
CEL NE85634-A technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 20mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain | 9dB |
| Height | 1.5mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | 25°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Operating Frequency | 6.5 GHz |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 2W |
| Transition Frequency | 6.5GHz |
| DC Rated Voltage | 12V |
| Weight | 0.004603oz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
CEL NE85634-A Datasheet
Download the complete datasheet for CEL NE85634-A to view detailed technical specifications.
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