NE85634-A

NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 12V collector-emitter breakdown voltage and a 6.5 GHz transition frequency. This surface mount device, housed in a SOT-89 package, offers a maximum continuous collector current of 100mA and a power dissipation of 2W. Key specifications include a minimum hFE of 120 and a gain of 9dB, with an operating temperature range from -25°C to 150°C.