The CEL NE97733-T1B-A is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 12V and a maximum collector current of 50mA. It has a gain bandwidth product of 8.5GHz and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a surface-mount SOT-23 package and is suitable for high-frequency applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the CEL NE97733-T1B-A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-23 |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 8.5GHz |
| Gain | 12dB |
| Gain Bandwidth Product | 8.5GHz |
| Max Collector Current | 50mA |
| Max Frequency | 8.5GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Transition Frequency | 8.5GHz |
| RoHS | Compliant |
Download the complete datasheet for CEL NE97733-T1B-A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
