The CEL NE97733-T1B-A is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 12V and a maximum collector current of 50mA. It has a gain bandwidth product of 8.5GHz and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a surface-mount SOT-23 package and is suitable for high-frequency applications.
CEL NE97733-T1B-A technical specifications.
| Package/Case | SOT-23 |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 8.5GHz |
| Gain | 12dB |
| Gain Bandwidth Product | 8.5GHz |
| Max Collector Current | 50mA |
| Max Frequency | 8.5GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Transition Frequency | 8.5GHz |
| RoHS | Compliant |
Download the complete datasheet for CEL NE97733-T1B-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
