The 1N3329RB is a unidirectional silicon zener diode with a maximum operating temperature of 175 degrees Celsius and a maximum power dissipation of 50 milliwatts. It is packaged in a hermetically sealed metal DO-5 package with one terminal positioned on the upper side. The diode element is made of silicon and is suitable for use in a variety of applications. The 1N3329RB is a discrete semiconductor component that operates within a temperature range of -65 to 175 degrees Celsius.
PolarityUNIDIRECTIONAL
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Technical Specifications
Central Semiconductor 1N3329RB technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 1 |
| Min Operating Temperature | -65 |
| Terminal Position | UPPER |
| JEDEC Package Code | DO-5 |
| Pin Count | 1 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 50 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Central Semiconductor 1N3329RB Datasheet
Download the complete datasheet for Central Semiconductor 1N3329RB to view detailed technical specifications.
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