The 1N3897 is a Silicon Stabistor Diode from Central Semiconductor. It features a maximum operating temperature of 200 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. The diode is packaged in a DO-35 axial package, suitable for through-hole mounting. It has a maximum power dissipation of 0.4 watts and is constructed from Silicon material.
Quick Jump:
Technical Specifications
Central Semiconductor 1N3897 technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-35 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | STABISTOR DIODE |
| Power Dissipation-Max | 0.4 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Central Semiconductor 1N3897 Datasheet
Download the complete datasheet for Central Semiconductor 1N3897 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.