Central Semiconductor
1N5418 TR
2-Pin GPR-4AM Through Hole Switching Diode 400V 3A 80A 1.1V 150ns -65C to 200C
The 1N5418 TR is a single switching diode with a peak reverse repetitive voltage rating of 400V and a maximum continuous forward current of 3A at 55C. It features a peak non-repetitive surge current of 80A and a peak forward voltage of 1.1V. The diode has a peak reverse recovery time of 150ns and operates over a temperature range of -65C to 200C. It is available in a 2-pin GPR-4AM package with a through hole mounting style.
PackageGPR-4AM
MountingThrough Hole
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Technical Specifications
Central Semiconductor 1N5418 TR technical specifications.
General
| Package Family Name | GPR-4AM |
| Package/Case | GPR-4AM |
| Lead Shape | Through Hole |
| Pin Count | 2 |
| PCB | 2 |
| Package Length (mm) | 4.8(Max) |
| Package Diameter (mm) | 4.45(Max) |
| Package Weight (g) | 0.947 |
| Package Material | Glass |
| Mounting | Through Hole |
| Type | Switching Diode |
| Configuration | Single |
| Peak Reverse Repetitive Voltage | 400V |
| Maximum Continuous Forward Current | 3@Ta=55CA |
| Peak Non-Repetitive Surge Current | 80A |
| Peak Forward Voltage | 1.1V |
| Peak Reverse Current | 1uA |
| Peak Reverse Recovery Time | 150ns |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Operating Junction Temperature | -65 to 200°C |
Compliance
| Cage Code | 55464 |
| HTS Code | 8541100080 |
| Schedule B | 8541100080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Central Semiconductor 1N5418 TR Datasheet
Download the complete datasheet for Central Semiconductor 1N5418 TR to view detailed technical specifications.
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