The 1N5551 TR is a single switching diode with a peak reverse repetitive voltage of 400V and a maximum continuous forward current of 3A at 55°C. It features a peak non-repetitive surge current of 100A and a peak forward voltage of 1V. The diode is mounted through a hole in a PCB and has a glass package with a maximum diameter of 4.45mm and a maximum weight of 0.947g. It operates over a temperature range of -65°C to 200°C.
PackageGPR-4AM
MountingThrough Hole
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Technical Specifications
Central Semiconductor 1N5551 TR technical specifications.
General
| Package Family Name | GPR-4AM |
| Package/Case | GPR-4AM |
| Lead Shape | Through Hole |
| Pin Count | 2 |
| PCB | 2 |
| Package Length (mm) | 4.8(Max) |
| Package Diameter (mm) | 4.45(Max) |
| Package Weight (g) | 0.947 |
| Package Material | Glass |
| Mounting | Through Hole |
| Type | Switching Diode |
| Configuration | Single |
| Peak Reverse Repetitive Voltage | 400V |
| Maximum Continuous Forward Current | 3@Ta=55CA |
| Peak Non-Repetitive Surge Current | 100A |
| Peak Forward Voltage | 1V |
| Peak Reverse Current | 1uA |
| Peak Reverse Recovery Time | 2000ns |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Operating Junction Temperature | -65 to 200°C |
Compliance
| Cage Code | 55464 |
| HTS Code | 8541100080 |
| Schedule B | 8541100080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Central Semiconductor 1N5551 TR Datasheet
Download the complete datasheet for Central Semiconductor 1N5551 TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.