NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-66 metal package. Features a maximum collector-emitter voltage of 300V and a maximum DC collector current of 1A, with a power dissipation of 20000mW. Offers a minimum DC current gain of 30 at 50mA and 10V, and a minimum transition frequency of 10MHz. Operating temperature range is -65°C to 200°C.
PackageTO-66
MountingThrough Hole
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Technical Specifications
Central Semiconductor 2N3739 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-213-AA |
| Package/Case | TO-66 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 24.43(Max) + 7.36 |
| Package Width (mm) | 17.78 |
| Package Height (mm) | 8.64(Max) |
| Seated Plane Height (mm) | 8.64(Max) |
| Pin Pitch (mm) | 5.33(Max) |
| Package Weight (g) | 5.84 |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-213AA |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 325V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 300V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 20000mW |
| Material | Si |
| Minimum DC Current Gain | 30@50mA@10V|40@100mA@10V|25@250mA@10V |
| Maximum Transition Frequency | 10(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 55464 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Central Semiconductor 2N3739 Datasheet
Download the complete datasheet for Central Semiconductor 2N3739 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.