The 3N254-M is a silicon bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It features a single terminal position and four diode elements made of silicon. The device has a maximum reverse voltage of 100 volts and a minimum breakdown voltage of 100 volts.
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Technical Specifications
Central Semiconductor 3N254-M technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -65 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Breakdown Voltage-Min | 100 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.80 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Central Semiconductor 3N254-M Datasheet
Download the complete datasheet for Central Semiconductor 3N254-M to view detailed technical specifications.
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