The 3N256-M bridge rectifier diode from Central Semiconductor features a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a single terminal position and is constructed with silicon diode elements. The device is rated for a maximum reverse voltage of 400 volts and has a minimum breakdown voltage of 400 volts.
Quick Jump:
Technical Specifications
Central Semiconductor 3N256-M technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -65 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 400 |
| Breakdown Voltage-Min | 400 |
Compliance
| RoHS | No |
| Lead Free | No |
| HTS Code | 8541.10.00.80 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Central Semiconductor 3N256-M Datasheet
Download the complete datasheet for Central Semiconductor 3N256-M to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.