Central Semiconductor
CBR1-D080S
Bridge Rectifier Diode, Schottky, 1 Phase, 1A, 800V V(RRM), Silicon, DIP-4
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Technical Specifications
Central Semiconductor CBR1-D080S technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Pin Count | 4 |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
| Breakdown Voltage-Min | 800 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.80 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Central Semiconductor CBR1-D080S Datasheet
Download the complete datasheet for Central Semiconductor CBR1-D080S to view detailed technical specifications.
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