Central Semiconductor
CBR1F-D100S
Bridge Rectifier Diode, Schottky, 1 Phase, 1A, 1000V V(RRM), Silicon, DIP-4
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Technical Specifications
Central Semiconductor CBR1F-D100S technical specifications.
General
Max Operating Temperature
150
Number of Terminals
4
Min Operating Temperature
-65
Terminal Position
DUAL
Pin Count
4
Number of Elements
4
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
1000
Breakdown Voltage-Min
1000
Compliance
RoHS
No
Eccn Code
EAR99
Lead Free
No
HTS Code
8541.10.00.80
REACH
not_compliant
Military Spec
False
Datasheet
Central Semiconductor CBR1F-D100S Datasheet
Download the complete datasheet for Central Semiconductor CBR1F-D100S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.