The CMLT3906E is a PNP bipolar junction transistor with a maximum collector-emitter voltage of 40V and a continuous collector current of 450mA. It features a gain bandwidth product of 300MHz and a collector-emitter saturation voltage of 100mV. The transistor is packaged in a SOT-563 outline and is available in quantities of 3000 on tape and reel. The operating temperature range is from -65°C to 150°C.
Central Semiconductor CMLT3906E technical specifications.
| Package/Case | SOT-563 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector-emitter Voltage-Max | 40V |
| Continuous Collector Current | 450mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 90 |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 350mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Series | CMLT3906E |
| RoHS | Not Compliant |
Download the complete datasheet for Central Semiconductor CMLT3906E to view detailed technical specifications.
No datasheet is available for this part.