The CENTRAL SEMICONDUCTOR CMOSH-4E is an enhanced version of the CMOSH-3 silicon Schottky diode housed in an SOD-523 surface mount package. It features a higher maximum forward current of 200mA and a higher peak repetitive reverse voltage of 40V compared to the standard CMOSH-3. It is designed for applications requiring low forward voltage and high reliability in a small footprint.
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Technical Specifications
Central Semiconductor CMOSH-4E TR PBFREE technical specifications.
General
| Peak Repetitive Reverse Voltage (VRRM) | 40V |
| Continuous Forward Current (IF) | 200mA |
| Peak Repetitive Forward Current (IFRM) | 350mA |
| Peak Forward Surge Current (IFSM) | 750mA |
| Power Dissipation (PD) | 250mW |
| Forward Voltage (VF) max @ 200mA | 1.0V |
| Reverse Current (IR) max @ 25V | 500nA |
| Junction Capacitance (CJ) typ | 7.0pF |
| Reverse Recovery Time (trr) typ | 5.0ns |
| Operating Junction Temperature | -65 to +150°C |
Compliance
| RoHS | Compliant |
| Lead-free | Yes |
| REACH | Compliant |
Datasheet
Central Semiconductor CMOSH-4E TR PBFREE Datasheet
Download the complete datasheet for Central Semiconductor CMOSH-4E TR PBFREE to view detailed technical specifications.
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