The CMRDM3575 is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It features a continuous drain current of 140mA and a drain to source breakdown voltage of 20V. The device has a drain to source resistance of 4 ohms and a power dissipation of 125mW. It is available in a SOT-963 package type, packaged on a tape and reel.
PackageSOT-963
PolarityP-CHANNEL
Power125mW
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Technical Specifications
Central Semiconductor CMRDM3575 technical specifications.
General
| Package/Case | SOT-963 |
| Continuous Drain Current (ID) | 140mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 4R |
| Element Configuration | Single |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 125mW |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Central Semiconductor CMRDM3575 Datasheet
Download the complete datasheet for Central Semiconductor CMRDM3575 to view detailed technical specifications.
No datasheet is available for this part.