PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
Power1.65W
Quick Jump:
Technical Specifications
Central Semiconductor CTLDM303N-M832DSTR technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 590pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.65W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.65W |
| Rds On Max | 40mR |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Central Semiconductor CTLDM303N-M832DSTR Datasheet
Download the complete datasheet for Central Semiconductor CTLDM303N-M832DSTR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.