Central Semiconductor CTLDM303N-M832DSTR technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 590pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.65W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.65W |
| Rds On Max | 40mR |
| RoHS Compliant | No |
| RoHS | Not Compliant |
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