PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Central Semiconductor CWDM305NDTR13 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 560pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 30mR |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Central Semiconductor CWDM305NDTR13 Datasheet
Download the complete datasheet for Central Semiconductor CWDM305NDTR13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.