PNP Bipolar Junction Transistor (BJT) in SOT-89 surface mount package. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 250MHz. Maximum power dissipation is 1.2W, with operating temperatures ranging from -65°C to 150°C.
Central Semiconductor CXT3906TR technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 250MHz |
| Height | 1.7mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 4.7mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| Weight | 0.004603oz |
| Width | 2.7mm |
| RoHS | Not Compliant |
Download the complete datasheet for Central Semiconductor CXT3906TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.