NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 300V collector-emitter voltage (VCEO) and a 500mA maximum collector current. Operates with a 50MHz transition frequency and a 500mV collector-emitter saturation voltage. Packaged in a SOT-89 surface-mount case, this component offers a 1.2W power dissipation and a wide operating temperature range from -65°C to 150°C.
Central Semiconductor CXTA42TR technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.2W |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| Weight | 0.004603oz |
| RoHS | Not Compliant |
Download the complete datasheet for Central Semiconductor CXTA42TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.