Central Semiconductor
CYT5551D
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, PACKAGE-8
PackageSOT-228
PolarityNPN
Quick Jump:
Technical Specifications
Central Semiconductor CYT5551D technical specifications.
General
Package/Case
SOT-228
Collector Base Voltage (VCBO)
180V
Collector Emitter Saturation Voltage
200mV
Collector-emitter Voltage-Max
160V
Continuous Collector Current
600mA
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
300MHz
hFE Min
30
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
RoHS Compliant
No
Series
CYT5551D
Compliance
RoHS
Not Compliant
Datasheet
Central Semiconductor CYT5551D Datasheet
Download the complete datasheet for Central Semiconductor CYT5551D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.