Central Semiconductor
CYT5551D
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, PACKAGE-8
PackageSOT-228
PolarityNPN
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Technical Specifications
Central Semiconductor CYT5551D technical specifications.
General
| Package/Case | SOT-228 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 160V |
| Continuous Collector Current | 600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 30 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
| Series | CYT5551D |
Compliance
| RoHS | Not Compliant |
Datasheet
Central Semiconductor CYT5551D Datasheet
Download the complete datasheet for Central Semiconductor CYT5551D to view detailed technical specifications.
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