Central Semiconductor
CYT5551HCD
Power Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, PACKAGE-8
PackageSOT-228
PolarityNPN
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Technical Specifications
Central Semiconductor CYT5551HCD technical specifications.
General
Package/Case
SOT-228
Collector Base Voltage (VCBO)
180V
Collector Emitter Saturation Voltage
200mV
Collector-emitter Voltage-Max
160V
Continuous Collector Current
1A
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
100MHz
hFE Min
30
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
RoHS Compliant
No
Series
CYT5551HCD
Compliance
RoHS
Not Compliant
Datasheet
Central Semiconductor CYT5551HCD Datasheet
Download the complete datasheet for Central Semiconductor CYT5551HCD to view detailed technical specifications.
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