This silicon bidirectional transient voltage suppressor diode has a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It features a dual terminal position and a single diode element made of silicon. The diode type is a trans voltage suppressor diode with a nominal breakdown voltage of 16 volts and a maximum breakdown voltage of 16.8 volts. It can handle a maximum non-repetitive peak reverse power dissipation of 600 watts.
Central Semiconductor P6SMB16CATR13 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 13.6 |
| Breakdown Voltage-Min | 15.2 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Breakdown Voltage-Nom | 16 |
| Breakdown Voltage-Max | 16.8 |
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Central Semiconductor P6SMB16CATR13 to view detailed technical specifications.
No datasheet is available for this part.