The TIP142 is a TO-218 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 10A. It has a high current gain of 1000 and a maximum power dissipation of 125W. The transistor is designed for through hole mounting and has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It is not RoHS compliant.
PackageTO-218
MountingThrough Hole
PolarityNPN
Power125W
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Technical Specifications
Central Semiconductor TIP142 technical specifications.
General
| Package/Case | TO-218 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 100V |
| Continuous Collector Current | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 1000 |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 20 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 125W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Central Semiconductor TIP142 Datasheet
Download the complete datasheet for Central Semiconductor TIP142 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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