NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-220 package. Features a maximum collector-emitter voltage of 60V and a continuous collector current of 3A, with a maximum power dissipation of 2000mW. This single-element transistor is constructed from silicon and offers a minimum DC current gain of 25 at 1A/4V. Operating temperature range is -65°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Central Semiconductor TIP31A technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.6(Max)
Package Width (mm)
4.82(Max)
Package Height (mm)
9.02(Max)
Seated Plane Height (mm)
22.22(Max)
Pin Pitch (mm)
2.79(Max)
Package Weight (g)
1.89
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
60V
Maximum DC Collector Current
3A
Maximum Power Dissipation
2000mW
Material
Si
Minimum DC Current Gain
25@1A@4V|10@3A@4V
Maximum Transition Frequency
3(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
55464
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Central Semiconductor TIP31A Datasheet
Download the complete datasheet for Central Semiconductor TIP31A to view detailed technical specifications.
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