The 1N4755A-G is a silicon zener diode with a maximum operating temperature of 175°C and a maximum power dissipation of 1W. It has a unidirectional polarity and is packaged in a DO-41 axial lead package. The diode element is made of silicon and is a single zener diode. It is suitable for use in a variety of applications where a reliable and efficient zener diode is required.
PolarityUNIDIRECTIONAL
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Technical Specifications
Comchip 1N4755A-G technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-41 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Comchip 1N4755A-G Datasheet
Download the complete datasheet for Comchip 1N4755A-G to view detailed technical specifications.
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